New barrier layer design for the fabrication of gallium nitride-metal-insulator-semiconductor-high electron mobility transistor normally-off transistor
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چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: Semiconductor Science and Technology
سال: 2021
ISSN: 0268-1242,1361-6641
DOI: 10.1088/1361-6641/abd489